SEMICONDUCTOR ALD
Atomic Layer Deposition equipment and solutions for specialty 200mm semiconductor devices
Stay Up-to-Date
Sign up to receive updates about Forge Nano’s semiconductor solutions, products and technology.
APPLICATIONS & MARKETS
APPLICATIONS
METAL BARRIER SEED
All-thermal ALD Ru-based stacks for scaling Through Silicon and Through Glass Vias past 25:1 aspect ratios
MOISTURE BARRIERS
Modular nanolaminate barriers with performance outpacing PECVD in extreme environments
PASSIVATION LAYERS
Catalyzed passivation films enabling 3D power and microLED device architectures
HIGH-K DIELECTRICS
High-quality dielectrics with tunable electrical performance rivaling traditionally deposited gate oxide films
MARKETS
POWER DEVICES
Interfacial dielectric and passivation solutions for wide bandgap semiconductors, including SiC and GaN
RF DEVICES
Robust barrier and dielectric depositions for long-lasting, worry-free RFIC operation
MEMS
Bespoke encapsulation, barrier and anti-stiction films for precision manufacturing of emerging sensor technology
LED & PHOTONICS
Improving PIC and microLED reliability with state-of-the-art gap fill and passivation films
ADVANCED PACKAGING
All-ALD barrier seed films enabling high aspect ratio through vias for 3D integration
CASE STUDY
One of the most important layers in back-of-the-line processing for radio frequency and power devices is the encapsulation layer to protect the device from environmental degradation.
While traditionally done with PECVD, ALD deposits a dense, pinhole-free film that provides superior barrier properties without risk of surface damage.
DOWNLOAD PAPER
ATOMIC LAYER DEPOSITION EQUIPMENT
Forge Nano’s ALDx tools for both commercial and R&D applications
Submit a Request
Want to learn more? Use the form, to submit an inquiry.
