Uniform films.
Stable interfaces.
Repeatable results.
Semiconductor Systems
Where wafer-level
precision becomes
reliable semiconductor
performance
Powered by Forge Nano’s patented ALDˣ architecture, our systems deliver Atomic Armor™ – ultra-uniform, conformal coatings that help stabilize interfaces and enable repeatable performance across complex wafer geometries.
Designed for R&D through production, these systems provide the precision needed for dielectric, passivation and barrier seed layers, and next-generation device architectures.
CHALLANGES
The barriers
limiting next-gen
wafer performance
-
01
UNEVEN FILM THICKNESS
Variability across the wafer creates device inconsistency, reduces yields, and limits scaling into advanced nodes.
-
02
INTERFACE INSTABILITY
Layer interfaces degrade under thermal and electrical stress, undermining long-term device reliability.
-
03
GEOMETRY LIMITATIONS
High-aspect-ratio features require conformity that many deposition methods struggle to deliver.
-
04
PROCESS COMPLEXITY
R&D recipes rarely scale cleanly; production demands precise control and repeatable cycle-to-cycle performance.
Precision
engineered into
every layer
HIGH UNIFORMITY
CONFORMAL COVERAGE
STABLE INTERFACES
REPEATABLE CYCLES
TIGHTER TOLERANCES
SCALEABLE THROUGHPUT
Forge Nano’s patented ALDˣ technology pairs fast precursor delivery with atomic-layer control for precise surface engineering. We help stabilize films and interfaces from R&D through high-volume manufacturing, reducing the variability common in conventional deposition and delivering the repeatable control next-generation semiconductor nodes require.
From Lab to Fab:
ALD Hardware for
every scale
TEPHRA™
The production powerhouse. TEPHRA provides chemical efficiency and HVM throughput for specialty semiconductor fabs.
Up to 10x Throughput – Relative to traditional ALD systems.
Up to 100x Efficiency – In precursor chemical utilization relative to traditional ALD.
4/6/8 Sided – Modular cluster configurations.
TEPHRAOne™
A fully automated 200mm single-module platform. Outfitted with flagship ALDx™ features in a streamlined configuration for process qualification.
Single-Wafer Automation – Optimized for up to 200mm wafers.
100% Recipe Transfer – Seamless migration to full cluster tools.
SMFD-ALD Enabled – Dynamic and coordinated control for high-speed ALD.
THEIA™
Fast, flexible, and field-upgradeable. Designed for rapid material discovery and pilot validation.
75mm to 200mm – Flexible substrate handling.
Up to 100 Å/minute – Ultrafast deposition rates.
Proprietary fast pneumatic valves – rated for 100 million actuations
ALD for every layer of the
semiconductor stack
ADVANCED PACKAGING
Thermal ALD seed and barrier layers enabling high-aspect-ratio Cu fill, reliable 2.5D/3D integration, and improved interconnect performance in advanced packaging workflows.
PHOTONICS
Conformal passivation and gap-fill films that help enhance optical interfaces, extend device lifetime, and improve material consistency across PICs, microLEDs, and high-precision photonics platforms.
RF DEVICES
High-quality dielectric and passivation layers engineered for GaAs, GaN, and other compound semiconductor devices, helping improve breakdown strength, thermal reliability, and long-term device durability.
POWER DEVICES
Robust ALD dielectrics and interface layers that help improve breakdown strength, thermal stability, and lifetime in wide-bandgap power devices.
HIGH-K & PASSIVATION
Precisely controlled high-k and passivation films delivering uniform coverage, low defect density, and stable interfaces for advanced logic and memory nodes.
Proof In Action
Insight
The ALDˣ platform provides faster time to data, superior film properties, a smooth transition to HVM and stable performance over tool life. Our ALDˣ line will ensure that your development roadmap is accelerated and ALDˣ enables your current device performance.
Matt Weimer
Forge Nano – Director of R&D