R&D SCALE WAFER COATING SYSTEM 

THEIA  combines production proven design and system components of our commercial solution APOLLO, in an R&D package that delivers                  unmatched performance, flexibility, reliability, and safety. THEIA is field upgradeable to accommodate the ever-changing needs of scientists and engineers. THEIA enables a seamless transition from   R&D to production. Recipes created with THEIA can be sent to APOLLO for a simple and straightforward path to commercial scale production.  

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PERFORMANCE  

THEIA delivers ultra fast deposition with Forge Nano’s patented SMFD-ALD™, in a low cost system for R&D budgets. Sub-second ALD cycle times allow efficient and rapid exploration of applications requiring thick films. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with aspect ratios up to 1,000. 
THEIA is a low-cost versatile ALD system that fits most R&D budgets. The flexible chamber design allows for both round up to 350 mm substrate chuck that fits semiconductor wafers, or square parts carrying tray that better accommodates panels or randomly shaped parts
 

Capabilities:

  • Fast and thick film deposition ( > 5 micron)
  • Fast ALD deposition at low temperatures
  • Low temperature processing (down to 80 °C)
  • Seamless incorporation of nano-laminates with reproducible atomic-layer control
  • Composite ternary and quaternary alloy films with no throughput penalty
  • In situ QCM monitoring of film growth with high mass and time resolution
  • Field reconfigurable

Applications:

  • ALD precursors development 
  • Environment barrier coatings
  • Interface and adhesion layers Corrosion protection 
  • Abrasion resistant coatings 
  • Area selective chemistry development

KEY FEATURES

  • Field-upgradeable and scalable
  • Ultra fast deposition 120-300 Å/min
  • Maintenance at intervals of 50 μm  
  • Proprietary valves <1 msec speed and 100 millions cycle lifetime
  • Better than 1% uniformity across wafer   and between batches
  • Fully integrated, unlimited number of chemical sources and chemical delivery lines for volatile and non-volatile precursors
  • Industrial PLC control with production-environment reliability and safety
  • User friendly, flexible GUI

Performance: THEIA is the only R&D tool for ALD that delivers blazing fast deposition compatible with large-scale production. With Forge Nano’s patented SMFD-ALD™, new powerful capabilities are finally available in a low cost system that fits most R&D budgets. Sub-second ALD cycle times allow efficient and rapid exploration of applications requiring thick films. Proprietary sources and processes enable new applications with unprecedented reproducibility and control. Film growth is monitored with better than 5% of monolayer resolution with an integrated QCM for finer process exploration and optimization and the finest growth details. At last – Developer allows you to unleash the full potential of atomic layer deposition. Capabilities: With its unmatched, extremely high chemical utilization efficiency, THEIA is ideal for exploration of newly developed ALD precursors. At the initial stage, ALD precursors are often extremely expensive ($1,000/gm is not unusual) and are available in very small quantities. You can also benefit from the many mature high-productivity ALD processes that include HfO2, ZrO2, Ta2O5 SiO2, <300C TiN, BN, GaN, Nb3N5 and more, available as turn-key processes from Forge Nano. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with up to 1,000 X enhanced area.

Configuration: THEIA is available in 3 wafer size configurations (75mm to 300mm) and a fourth configuration for general parts and/or panels up to 300x300x10 mm. All configurations can be retrofitted in the field with flexible field-upgradeable options.

Capabilities: THEIA is ideal for exploration of newly developed ALD precursors. At the initial stage, ALD precursors are often extremely             expensive ($1,000/gm is not unusual) and are    available in very small quantities. Users also  benefit from the many mature high productivity ALD processes that include HfO2, ZrO2, Ta2O5 SiO2, <300°C TiN, BN, GaN, Nb3N5 and more, available as turn-key processes from Forge Nano. 

Download our brochure for more information, or CONTACT us to speak to a surface engineering expert.

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