THEIA | R&D Scale Wafer Coating

R&D SCALE WAFER COATING SYSTEM 

THEIA  combines production proven design and system components of our commercial solution APOLLO, in an R&D package that delivers                  unmatched performance, flexibility, reliability, and safety. THEIA is field upgradeable to accommodate the ever-changing needs of scientists and engineers. THEIA enables a seamless transition from   R&D to production. Recipes created with THEIA can be sent to APOLLO for a simple and straightforward path to commercial scale production.  

PERFORMANCE

THEIA delivers ultra fast deposition with Forge Nano’s patented SMFD-ALD™, in a low cost system for R&D budgets. Sub-second ALD cycle times allow efficient and rapid exploration of applications requiring thick films. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with aspect ratios up to 1,000. 
THEIA is a low-cost versatile ALD system that fits most R&D budgets. The flexible chamber design allows for both round up to 200 mm substrate chuck that fits semiconductor wafers, or square parts carrying tray that better accommodates panels or randomly shaped parts

CAPABILITIES

  • Fast and thick film deposition ( > 5 micron)
  • Fast ALD deposition at low temperatures
  • Low temperature processing (down to 80 °C)
  • Seamless incorporation of nano-laminates with reproducible atomic-layer control
  •  
  • Composite ternary and quaternary alloy films with no throughput penalty
  • In situ QCM monitoring of film growth with high mass and time resolution
  • Field reconfigurable

SPECIFICATIONS

Temperature Window: 50 – 500 °C

Liquid Chemical Inlets: Up to 6

Gaseous Chemical Inlets: Up to 4

 

Footprint: 60″ L x 32″ W x 76″ H

Capacity: Up to 200mm wafers

5mm height clearance for coupons and objects

Substrate Handling: Manual single wafer loading

ULTRA FAST DEPOSITION WITH FORGE NANO’S PATENTED SMFD-ALD™

Chemistries: Al2O3, SiO2, AZO, TiO2, GaN, TiN, Bi2O3, Pt, Co, Cu, Ta205, Hf203, MLD

THEIA is ideal for exploration of newly developed ALD precursors. At the initial stage, ALD precursors are often extremely expensive ($1,000/gm is not unusual) and are    available in very small quantities. Users also  benefit from the many mature high productivity ALD processes that include HfO2, ZrO2, Ta2O5 SiO2, <300°C TiN, BN, GaN, Nb3N5 and more, available as turn-key processes from Forge Nano. Covering challenging patterned substrates such as advanced-generation DRAM device wafers, membranes, sensors, electron multipliers, etc. with up to 1,000 X enhanced area.

 

Applications: Copper Barrier, ALD-Cap, Optical, Adhesion/Seeding, TCOs

 

Design: THEIA is the only R&D tool for ALD that delivers blazing fast deposition compatible with large-scale production. With Forge Nano’s patented SMFD-ALD™, new powerful capabilities are finally available in a low cost system that fits most R&D budgets. Sub-second ALD cycle times allow efficient and rapid exploration of applications requiring thick films. Proprietary sources and processes enable new applications with unprecedented reproducibility and control. Film growth is monitored with better than 5% of monolayer resolution with an integrated QCM for finer process exploration and optimization and the finest growth details. THEIA allows you to unleash the full potential of atomic layer deposition.  

 Add Ons: Ozone Generator, QCM, Plasma

Download our brochure for more information, or CONTACT us to speak to a surface engineering expert.

DOWNLOAD BROCHURE  

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