Performance
Forge Nano’s proprietary valving and pressure control enable short ALD steps at cycles less than 3 milliseconds. The dynamic valve manifold enables an unrivaled rapid research and prototyping system. Efficient valve and pressure operation also reduce precursor waste upwards of 40x.
Base Configuration
- 6 Metal Organic Precursor Sources
- Hazardous Precursor Containment with Smoke Detection
- Heated In-Situ Abatement System
- Precursor Manifold Heating up to 200 °C
- Precursor Source Chilling down 15 °C below Ambient
- Substrate Heating up to 500 °C
- Height Adjustable Substrate Holder
- Automated Lift Pins and Single Wafer Handling
- Foreline Pump or Customer Provided
- Individual Pressure Control of all Manifold Inlets
- Chamber Heating up to 200 °C
- E95 Compliant HMI with data and alarm logging
- 3 Millisecond Fast Valve Actuation
- Standard Turnkey Processes for Al2O3, TiO2, ZnO, and more!
- External Outputs and Inputs for Facility Alarming
- Base Vacuum 10^-4 Torr
Upgrades
- Heated Precursor Sources (up to 4)
- In-Situ QCM Monitoring of Film Growth
- On-Demand Ozone Generation and Integrated Destruct
- Remote RF Plasma with 2 Forming Gas Inputs
- Toxic Gas Enclosure and Manifold Line (For H2S or Similar)
- External Hazardous Gas Sensors
- 100mm Substrate Chamber Height
- Automated Load-Lock
- Specialty Substrate Carriers (Designed Upon Request)
- Glovebox Integration (via Load-Lock)
Ultra Fast Deposition with Forge Nano’s Patented SMFD-ALD™
Example Chemistries:
Al2O3, SiO2, AZO, TiO2, GaN, TiN, Bi2O3, Pt, Co, Cu, Ta2O5, Hf2O3, MLD
Example Applications:
Copper Barrier, ALD-Cap, Optical, Adhesion/Seeding, TCOs