Uniform films.
Stable interfaces.
Repeatable results.
Powered by Forge Nano’s patented ALDˣ architecture, our systems deliver Atomic Armor™ – ultra uniform, conformal coatings that stabilize interfaces and enable repeatable performance across complex wafer geometries.
Designed for R&D through production, these systems provide the precision needed for dielectric layers, passivation layers, barrier seed layers, and next generation device architectures.
Variability across the wafer creates device inconsistency, reduces yields, and limits scaling into advanced nodes.
Layer interfaces degrade under thermal and electrical stress, undermining long-term device reliability.
High-aspect-ratio features require conformity that many deposition methods struggle to deliver.
R&D recipes rarely scale cleanly; production demands precise control and repeatable cycle-to-cycle performance.
The production powerhouse. TEPHRA provides the highest chemical efficiency and HVM throughput for speciality semiconductor fabs.
10x Throughput – Relative to traditional ALD systems.
100x Efficiency – In precursor chemical utilization relative to traditional ALD.
4/6/8 Sided – Modular cluster configurations.
A fully automated 20mm single-module platform. Outfitted with flagship ALDx™ features in a streamlined configuration for process qualification.
Singe-Wafer Automation – Optimized for up to 20mm wafers.
100% Recipe Transfer – Seamless migration to full cluster tools.
SMFD-ALD Enabled –Dynamic and coordinated control for high-speed ALD.
Fast, flexible, and field-upgradeable. Designed for rapid material discovery and pilot validation.
75mm to 200mm – Flexible substrate handling.
Up to 100 Å/minute – Ultrafast deposition rates.
Proprietary fast pneumatic valves – rated for 100 million
Thermal ALD seed and barrier layers enabling high-aspect ratio Cu fill, reliable 2.5D/3D integration, and improved inter connect performance in advanced packaging workflows.
Conformal passivation and gap-fill films that enhance optical interfaces, extend device lifetime, and improve material consistency across PICs, microLEDs, and high-precision photonics platforms.
High-quality dielectric and passivation layers engineered for GaAs, GaN, and other wide-bandgap devices, improving breakdown strength, thermal reliability, and long-term device durability.
Robust ALD dielectrics and interface layers that improve breakdown strength, thermal stability, and lifetime in wide bandage power devices.
Precisely controlled high-k and passivation films delivering uniform coverage, low defect density, and stable interfaces for advanced logic and memory nodes.