Atomic-Scale Control
For Every Wafer.

Uniform films.

Stable interfaces.

Repeatable results.

Semiconductor ALD Systems

Where wafer-level
precision becomes
reliable semiconductor
performance

Powered by Forge Nano’s patented ALDˣ architecture, our systems deliver Atomic Armor™ – ultra uniform, conformal coatings that stabilize interfaces and enable repeatable performance across complex wafer geometries.

Designed for R&D through production, these systems provide the precision needed for dielectric layers, passivation layers, barrier seed layers, and next generation device architectures.

Current State

The barriers
limiting next-gen
wafer performance

  • 01

    UNEVEN FILM THICKNESS

    Variability across the wafer creates device inconsistency, reduces yields, and limits scaling into advanced nodes.

  • 02

    INTERFACE INSTABILITY

    Layer interfaces degrade under thermal and electrical stress, undermining long-term device reliability.

  • 03

    GEOMETRY LIMITATIONS

    High-aspect-ratio features require conformity that many deposition methods struggle to deliver.

  • 04

    PROCESS COMPLEXITY

    R&D recipes rarely scale cleanly; production demands precise control and repeatable cycle-to-cycle performance.

Precision
engineered into
every layer

HIGH UNIFORMITY
PERFECT CONFORMITY
STABLE INTERFACES
REPEATABLE CYCLES
TIGHTER TOLERANCES
SCALABLE THROUGHPUT
Powered by Forge Nano’s proprietary ALDˣ technology, our systems deliver uncompromised surface engineering across complex wafer architectures. By integrating high-speed delivery with atomic-layer precision, we stabilize critical interfaces and eliminate the variability of other deposition techniques. From R&D to high-volume manufacturing, our ALDˣ process provides the hardened, repeatable control required to dominate next-generation semiconductor nodes.

From Lab to Fab:
ALD Hardware for
every scale

High-Volume Manufacturing Cluster

TEPHRA™

The production powerhouse. TEPHRA provides the highest chemical efficiency and HVM throughput for speciality semiconductor fabs.

10x Throughput Relative to traditional ALD systems.

100x Efficiency – In precursor chemical utilization relative to traditional ALD.

4/6/8 Sided Modular cluster configurations.

Automated Pilot Production

TEPHRAOne™

A fully automated 20mm single-module platform. Outfitted with flagship ALDx™ features in a streamlined configuration for process qualification.

Singe-Wafer Automation Optimized for up to 20mm wafers.

100% Recipe Transfer Seamless migration to full cluster tools.

SMFD-ALD Enabled –Dynamic and coordinated control for high-speed ALD.

The R&D-to-Production Bridge

THEIA™

Fast, flexible, and field-upgradeable. Designed for rapid material discovery and pilot validation.

75mm to 200mm Flexible substrate handling.

Up to 100 Å/minute – Ultrafast deposition rates.

Proprietary fast pneumatic valves – rated for 100 million

ALD for every layer of the
semiconductor stack

ADVANCED PACKAGING

Thermal ALD seed and barrier layers enabling high-aspect ratio Cu fill, reliable 2.5D/3D integration, and improved inter connect performance in advanced packaging workflows.

PHOTONICS

Conformal passivation and gap-fill films that enhance optical interfaces, extend device lifetime, and improve material consistency across PICs, microLEDs, and high-precision photonics platforms.

RF DEVICES

High-quality dielectric and passivation layers engineered for GaAs, GaN, and other wide-bandgap devices, improving breakdown strength, thermal reliability, and long-term device durability.

POWER DEVICES

Robust ALD dielectrics and interface layers that improve breakdown strength, thermal stability, and lifetime in wide bandage power devices.

HIGH-K & PASSIVATION

Precisely controlled high-k and passivation films delivering uniform coverage, low defect density, and stable interfaces for advanced logic and memory nodes.

Proof In Action

Semiconductor: Case Study

Our Impact

One of the most important layers in back-of-the-line processing for radio frequency and power devices is the encapsulation layer to protect the device from environmental degradation.

While traditionally done with PECVD, ALD deposits a dense, pinhole-free film that provides superior barrier properties without risk of surface damage.

Insight

The ALDˣ platform provides faster T7D, superior film properties, a smooth transition to HVM and stable performance over tool life. Our ALDˣ line will ensure that your development roadmap is accelerated and ensure ALDˣ enables your current device performance.

Matt Weimer

Forge Nano – Director of R&D

Unlock cleaner, faster yields.

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