POWER DEVICES
Interfacial dielectric and passivation solutions for wide bandgap semiconductors, including SiC and GaN
SiC Power
Forge Nano’s catalyzed thermal SiO2 process shows higher density and breakdown voltage than plasma-enhanced ALD, enabling 3D architectures as a gate oxide, like trench MOSFETs.GaN Power
Forge Nano’s AlN and Al2O3 films are poised to help solve trap and leakage issues associated with unstable GaN and Ga2O3 interfaces.
RELATED APPLICATIONS
MOISTURE BARRIERS
Modular nanolaminate barriers with performance outpacing PECVD in extreme environments
PASSIVATION LAYERS
Catalyzed passivation films enabling 3D power and microLED device architectures
HIGH-K DIELECTRICS
High-quality dielectrics with tunable electrical performance rivaling traditionally deposited gate oxide films
ATOMIC LAYER DEPOSITION EQUIPMENT
Forge Nano’s ALDx tools for both commercial and R&D applications
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