TEPHRA™
200 mm Cluster Platform
Performance, Yield, and Speed. We don’t do tradeoffs.
TEPHRA is Forge Nano’s single-wafer, thermal ALD cluster tool dedicated to high volume manufacturing of specialty semiconductor applications on 200 mm wafers and below. It is built for high throughputs, efficient chemical use and low-risk manufacturing, setting new benchmarks for thermal ALD productivity.
Atomic layer deposition Designed for manufacturing
TEPHRA features Forge Nano’s proprietary ALDx technology combining batch-level throughput and efficiency with quality and performance in a single-wafer, thermal ALD cluster tool. With dedicated process modules for conformal oxide, nitride and metal depositions, TEPHRA enables advanced device architectures for applications in heterogeneous integration, power semiconductor, radio frequency devices, microLED and more.
enabling high aspect ratio METAL BARRIER SEED FILMS
Our flagship application for TEPHRA is the Metal Barrier Seed Stack. Powered by our ALDx technology, TEPHRA enables ultra conformal thin films in high aspect ratio structures for advanced 3D integration applications, including through silicon and through glass vias. Using proprietary catalyzed thermal ALD reactions, our process is poised to allow manufacturers to move beyond 10:1 aspect ratios, scale their packaging processes, and reduce power consumption all without the use of plasma.
cluster SPECIFICATIONS
TEPHRA is available in 3 configurations: a 4-sided, 6-side and 8-sided cluster platform.
| Specification | 3 Process Modules | 4 Process Modules | 6 Process Modules |
| Wafer Sizes | Up to 200 mm | ||
| Process Temperatures | 80°C to 300°C | ||
| Precursor Channels | Up to 6 | ||
| Power Requirements | 3-Phase,4-Wire 208Y/120 V @ 60Hz | ||
| Certifications | SEMI S-2, SEMI S-8, CE | ||
| Main dimensions (LxWxH) | 2660x3745x1960 mm | 2685x3840x1960 mm | 4070x3130x1960 mm |
| Ancillary Equipment | Main Power Distribution 300x900x1800 mm | ||
MATERIALS
Oxides: Al2O3, SiO2, HfO2, ZrO2, Ta2O5, AZO, TiO2, Y2O3
Nitrides: TiN, TaN, AlN, GaN, ZrN,
Elements: Ru, Pt, Co, Cu, Ni
APPLICATIONS
Barrier Films
Seed Layers
Moisture Barriers
Dielectrics
Passivation Layers
Transparent Conductive Oxides