METAL BARRIER SEED
Increasing interconnect density is critical for advancing heterogeneous 3D integration strategies and have been limited to 20:1 aspect ratios by directional deposition techniques. Access conformal nitrides and metals at aspect ratios greater than 25:1 with Forge Nano’s catalyzed thermal ALD processes. Extend your interconnect roadmap with our all-thermal ALD barrier/seed for horizontal, blind and through vias.
Integration
- No plasma necessary, even for elemental films
- Dedicated chambers for oxide, nitride, and metal depositions
- Up to 6 process modules available to increase deposition throughput
Process & Materials
- First-of-its-kind all-thermal ALD barrier seed layer
- Catalyzed processes for highly conformal metal ALD
- Forge Nano MBS Stack: SiO2, TiN, Ru
Performance & Reliability
- Stack validated on TSVs and TGVs with aspect ratios up to 30:1
- Successful Cu electrodeposition on Ru seed layers
Enabling High Aspect Ratio Vias for Advanced Packaging and 3D Integration
BENEFITS OF ALDx
- Perfectly conformal sidewall and bottom coverage prevent void formation during Cu electroplating.
- Isotropic process allows scaling to aspect ratios past 25:1, increasing chip density and reducing power consumption in TSVs and TGVs.
- Thermal-only processing of nitrides and metals eliminates need for complex and expensive plasma hardware.
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Advanced 3D integration to vertically connect multiple stacked wafers requires the use of through silicon or through glass vias. To enable smaller chip integration and reduce power consumption, TSVs and TGVs will move to higher aspect ratios.
Forge Nano’s ALDx technology enables conformal coatings of metal barrier seed stacks to scale via technology to aspect ratios greater than 25:1 without the use of directional deposition technologies.
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RELATED MARKETS
MEMS
Bespoke encapsulation, barrier and anti-stiction films for precision manufacturing of emerging sensor technology
ADVANCED PACKAGING
All-ALD barrier seed films enabling high aspect ratio through vias for 3D integration
DISCOVER TEPHRA™
TEPHRA was designed specifically to enable advanced packaging applications in specialty 200 mm semiconductor markets. For metal barrier seed layers, choose from a 4, 6 or 8-sided cluster configuration with simultaneous single-wafer processing in multiple thermal ALD chambers for oxide, nitride and metal deposition.
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