ADVANCED PACKAGING
All-ALD barrier seed films enabling high aspect ratio through vias for 3D integration
Enabling the Next-Generation of 3D Integration
To increase processing ability, while decreasing chip footprint and power consumption, 3D integration strategies require interconnects to scale to aspect ratios much higher than the current 20:1 limit. Forge Nano’s ALDx technology allows the use of thermal ALD only for the deposition of barrier/seed films needed for copper vias. By using catalyzed thermal processes, metal depositions in HAR structures, like Ru, are no longer limited by recombination or directionality inherent in PEALD and PVD processes.
RELATED APPLICATIONS
METAL BARRIER SEED
All-thermal ALD Ru-based stacks for scaling Through Silicon and Through Glass Vias past 25:1 aspect ratios
ATOMIC LAYER DEPOSITION EQUIPMENT
Forge Nano’s ALDx tools for both commercial and R&D applications
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