ALDX Technology for High Reliability Electronics
Fast and Efficient Atomic Layer Deposition
Director of Application Engineering – Forge Nano
0:00:00 you for watching this virtual presentation. We look forward to speaking with you during the 2021 0:00:05 virtual event and seeing you in person 2022 at CS Symantec. This presentation is entitled L. D. To 0:00:12 the X power Technology or L. D. To the X. For high reliability electronics. I'm Stacey molten, the 0:00:19 director of field application engineering at forge nano. My role is to help customers determine what 0:00:27 is possible and the likelihood of commercial viability of what they're looking to do with L. D. And 0:00:34 determining the path required to get there. I have over 10 years of experience in A. L. D. 0:00:39 Applications, A PhD in chemical Engineering from the University of Colorado Boulder, as well as an M. 0:00:46 B. A. From the University of Colorado. Denver for Gino is an end to end solution provider for atomic 0:00:53 layer deposition. In a variety of markets, we provide everything from R and D. Services to contract 0:00:59 manufacturing and toll coding to equipment for commercial applications using atomic layer deposition. 0:01:06 Our mission is to be a world leader of innovative material solutions. This presentation highlights 0:01:12 are led to the X. Power technology for L. D. Cap and environmental protection barrier for compound 0:01:19 semiconductor applications. Atomic layer deposition enables adam level precision codings for a wide 0:01:27 variety of materials. It is self limited, meaning deposition is limited to a single atomic layer per 0:01:34 cycle performed. The diagram shows a single cycle of try meth, aluminum or T. Emma and water as the 0:01:43 two A and B steps of the complete cycle. This deposition deposits aluminum oxide in between those 0:01:50 two half reactions. You have a purge step with an inert gas such as nitrogen or argon. This is a 0:01:58 general easy typical reaction for atomic layer deposition and as the standard to see how deposition 0:02:06 works on almost any material. This process is independent of line of sight to the surface, meaning 0:02:13 high aspect ratio features uh Over 1000 will be uniformly coated throughout to the bottom. Um And 0:02:22 throughout any structure that might be used. The possibilities of A. L. D. Are almost endless and 0:02:28 span nearly the entire periodic table. This diagram uh is from atomic limits dot com and it's a 0:02:35 wonderful resource when you're looking for what is possible with A L. D. However, not everything on 0:02:41 this list is commercially valuable at the moment for the discussion today we are primarily 0:02:45 interested in metal oxides. A short list of what is possible with L. D. X. Is on the left hand of 0:02:51 the slide. Alumina silica titania, zirconia, zinc oxide, half nia. Any combination of those metal 0:02:59 oxides at different ratios as Well as Nana Laminates which are discreet combinations of two or more 0:03:08 of those oxides in a single coding. Um I have an image later in the presentation to show you that 0:03:14 shows a nana laminate. You can also deposit metals, night rides and many other materials. But like I 0:03:22 mentioned for today metal oxides is what you want to know. So the systems that we use for our L. D. 0:03:27 To the X. Power technology facilitate materials deposition without compromising layer quality 0:03:35 material properties, process efficiency or process speed. We enable this innovation through our S. M. 0:03:44 F. D. Process or synchronously modulated flow. And draw. I have a slide on that. Coming up next we 0:03:52 have three different types of systems that can do this process including Apollo on the right which 0:03:59 is for wafer applications and has a cassette to cassette handling system. You can look at our 0:04:06 website for a video or I'm happy to direct you towards it through conversation via is a 0:04:12 developmental tool used for R. and D. And helios is a large object Coding system, currently 22" 0:04:20 diameter. The deposition rates are 6-50 nanometers per minute. This is for Aluminum oxide or 62 500 0:04:31 Angstrom is per minute. This enables the ability to deposit thick films. However, for high 0:04:37 reliability electronics, we still keep those coatings down to Less than a 100 nanometers or up to 0:04:44 About 200 nm max. So these coatings can be used outside of these environmental protection barriers 0:04:52 for abrasion resistance on objects as well. There's many different applications for this technology. 0:05:00 As I mentioned this, we're enabling This ability to deposit at 62 500 and streams per minute through 0:05:08 our synchronously modulated flow and draw process control. So we threw this, we very quickly purge 0:05:19 the system of one of those precursors during the A or B step at a very high flow rate during the 0:05:26 draw. So this is done at a low pressure to induce that fast conviction of the precursor out of the 0:05:35 reactor. However, during the reaction force were flowing in precursor at a high pressure or the draw 0:05:43 portion to raise the precursors partial pressure and increase the rate of reaction. So rather than 0:05:53 having a slow reaction during that precursor introduction to the surface, we're increasing the 0:05:59 pressure, increasing the rate and increasing the speed during the removal of the precursor. We're 0:06:08 decreasing the pressure, increasing the rate of removal of that precursor during the purge, remove 0:06:16 that precursor with the inert gas and then transition to the other side of the reaction. Through 0:06:22 this. We are also able to increase the efficiency in the system so you no longer have the trade off 0:06:29 between speed and efficiency for A. L. D. An additional process advancement that we use is called 0:06:36 crisp or catalyzing reactions for induced surface properties. This is a proprietary technology to 0:06:43 forge nano. It's uh increases the again the rate of reaction by by those process steps that we're 0:06:50 doing. I'm happy to have this conversation with you afterwards. The biggest thing that I want to get 0:06:57 across here is that for difficult reactions like silicon dioxide were able to get the cycle times 0:07:04 very low because we're increasing that rate of reaction and catalyzing that portion of the process 0:07:11 so we can get cycle times down to three 4th of a second. Again we are we have no trade off between 0:07:19 efficiency and speed when we're Running this process. So again the two aspects of the system of 0:07:26 these systems that enable the zero trade off between speed and efficiency are the valves and the 0:07:30 pressure controllers. These valves can respond in less than a millisecond, meaning a cycle or a 0:07:37 pulse of the valve can happen in less than a millisecond. They can be directly heated to 200°C.. 0:07:44 They can be close stacked together, eliminating dead space in between the vows and meaning there's 0:07:51 less um in our gas in between or less dead precursor being wasted. They are refurbished double. So 0:08:00 you can send us back valves and we can send Out refurbished valves. They can be used for over 100 0:08:06 million cycles At that 20 hertz. So these are patented and these are only Built out for two Nano. 0:08:13 Those valves are also in our pressure controllers. So these pressure controllers have the valves 0:08:19 inside of them. They operate as a truly ultrahigh purity valve because of that uh sorry, ultrahigh 0:08:27 purity pressure controller because they have that valve inside. So there's no moving parts inside of 0:08:33 those valves. So you're also reducing the opportunity for particle generation. Again there's zero 0:08:39 dead space in this and they are true shut off valve. They are refurbished able and reasonable. It's 0:08:46 like I said I'm talking about high reliability electronics and I was going to show you a nana 0:08:51 laminate. So here on the right is an ana laminate and you can see the discrete layers of two 0:08:57 different metal oxides. There is a white paper on our website and I'm happy to direct you to it if 0:09:04 you would like. Um So these are F. Devices have this this environmental protection barrier on it. 0:09:13 The next slide has data um using our L. D. Cap for environmental protection barriers on our F. 0:09:21 Devices. These devices have gone through hast or harsh environmental testing at 130° C and 85% 0:09:31 reliability. uh relative humidity. The reliability of these devices after they've gone through the 0:09:38 test with the L. D. Cap has about three Percent failure or less than 1% failure. Based on the bias 0:09:49 voltage that was applied across the device, We're happy to provide more details on this data. 0:09:56 There's additional data listed in that white paper that I just mentioned. So this this comparison at 0:10:03 a 99% failure rate is to a plasma enhanced CVD deposition of silicon nitride at 200 nanometers. 0:10:13 Again, I hope this is interesting information for you were happy to discuss it more and I hope you 0:10:18 enjoyed this presentation. Thank you so much for watching.