ALDX Technology for High Reliability Electronics

Fast and Efficient Atomic Layer Deposition 

Session Notes:


Staci Moulton

Director of Application Engineering – Forge Nano 



0:00:00   you for watching this virtual presentation. We look forward to speaking with you during the 2021
0:00:05   virtual event and seeing you in person 2022 at CS Symantec. This presentation is entitled L. D. To
0:00:12   the X power Technology or L. D. To the X. For high reliability electronics. I'm Stacey molten, the
0:00:19   director of field application engineering at forge nano. My role is to help customers determine what
0:00:27   is possible and the likelihood of commercial viability of what they're looking to do with L. D. And
0:00:34   determining the path required to get there. I have over 10 years of experience in A. L. D.
0:00:39   Applications, A PhD in chemical Engineering from the University of Colorado Boulder, as well as an M.
0:00:46   B. A. From the University of Colorado. Denver for Gino is an end to end solution provider for atomic
0:00:53   layer deposition. In a variety of markets, we provide everything from R and D. Services to contract
0:00:59   manufacturing and toll coding to equipment for commercial applications using atomic layer deposition.
0:01:06   Our mission is to be a world leader of innovative material solutions. This presentation highlights
0:01:12   are led to the X. Power technology for L. D. Cap and environmental protection barrier for compound
0:01:19   semiconductor applications. Atomic layer deposition enables adam level precision codings for a wide
0:01:27   variety of materials. It is self limited, meaning deposition is limited to a single atomic layer per
0:01:34   cycle performed. The diagram shows a single cycle of try meth, aluminum or T. Emma and water as the
0:01:43   two A and B steps of the complete cycle. This deposition deposits aluminum oxide in between those
0:01:50   two half reactions. You have a purge step with an inert gas such as nitrogen or argon. This is a
0:01:58   general easy typical reaction for atomic layer deposition and as the standard to see how deposition
0:02:06   works on almost any material. This process is independent of line of sight to the surface, meaning
0:02:13   high aspect ratio features uh Over 1000 will be uniformly coated throughout to the bottom. Um And
0:02:22   throughout any structure that might be used. The possibilities of A. L. D. Are almost endless and
0:02:28   span nearly the entire periodic table. This diagram uh is from atomic limits dot com and it's a
0:02:35   wonderful resource when you're looking for what is possible with A L. D. However, not everything on
0:02:41   this list is commercially valuable at the moment for the discussion today we are primarily
0:02:45   interested in metal oxides. A short list of what is possible with L. D. X. Is on the left hand of
0:02:51   the slide. Alumina silica titania, zirconia, zinc oxide, half nia. Any combination of those metal
0:02:59   oxides at different ratios as Well as Nana Laminates which are discreet combinations of two or more
0:03:08   of those oxides in a single coding. Um I have an image later in the presentation to show you that
0:03:14   shows a nana laminate. You can also deposit metals, night rides and many other materials. But like I
0:03:22   mentioned for today metal oxides is what you want to know. So the systems that we use for our L. D.
0:03:27   To the X. Power technology facilitate materials deposition without compromising layer quality
0:03:35   material properties, process efficiency or process speed. We enable this innovation through our S. M.
0:03:44   F. D. Process or synchronously modulated flow. And draw. I have a slide on that. Coming up next we
0:03:52   have three different types of systems that can do this process including Apollo on the right which
0:03:59   is for wafer applications and has a cassette to cassette handling system. You can look at our
0:04:06   website for a video or I'm happy to direct you towards it through conversation via is a
0:04:12   developmental tool used for R. and D. And helios is a large object Coding system, currently 22"
0:04:20   diameter. The deposition rates are 6-50 nanometers per minute. This is for Aluminum oxide or 62 500
0:04:31   Angstrom is per minute. This enables the ability to deposit thick films. However, for high
0:04:37   reliability electronics, we still keep those coatings down to Less than a 100 nanometers or up to
0:04:44   About 200 nm max. So these coatings can be used outside of these environmental protection barriers
0:04:52   for abrasion resistance on objects as well. There's many different applications for this technology.
0:05:00   As I mentioned this, we're enabling This ability to deposit at 62 500 and streams per minute through
0:05:08   our synchronously modulated flow and draw process control. So we threw this, we very quickly purge
0:05:19   the system of one of those precursors during the A or B step at a very high flow rate during the
0:05:26   draw. So this is done at a low pressure to induce that fast conviction of the precursor out of the
0:05:35   reactor. However, during the reaction force were flowing in precursor at a high pressure or the draw
0:05:43   portion to raise the precursors partial pressure and increase the rate of reaction. So rather than
0:05:53   having a slow reaction during that precursor introduction to the surface, we're increasing the
0:05:59   pressure, increasing the rate and increasing the speed during the removal of the precursor. We're
0:06:08   decreasing the pressure, increasing the rate of removal of that precursor during the purge, remove
0:06:16   that precursor with the inert gas and then transition to the other side of the reaction. Through
0:06:22   this. We are also able to increase the efficiency in the system so you no longer have the trade off
0:06:29   between speed and efficiency for A. L. D. An additional process advancement that we use is called
0:06:36   crisp or catalyzing reactions for induced surface properties. This is a proprietary technology to
0:06:43   forge nano. It's uh increases the again the rate of reaction by by those process steps that we're
0:06:50   doing. I'm happy to have this conversation with you afterwards. The biggest thing that I want to get
0:06:57   across here is that for difficult reactions like silicon dioxide were able to get the cycle times
0:07:04   very low because we're increasing that rate of reaction and catalyzing that portion of the process
0:07:11   so we can get cycle times down to three 4th of a second. Again we are we have no trade off between
0:07:19   efficiency and speed when we're Running this process. So again the two aspects of the system of
0:07:26   these systems that enable the zero trade off between speed and efficiency are the valves and the
0:07:30   pressure controllers. These valves can respond in less than a millisecond, meaning a cycle or a
0:07:37   pulse of the valve can happen in less than a millisecond. They can be directly heated to 200°C..
0:07:44   They can be close stacked together, eliminating dead space in between the vows and meaning there's
0:07:51   less um in our gas in between or less dead precursor being wasted. They are refurbished double. So
0:08:00   you can send us back valves and we can send Out refurbished valves. They can be used for over 100
0:08:06   million cycles At that 20 hertz. So these are patented and these are only Built out for two Nano.
0:08:13   Those valves are also in our pressure controllers. So these pressure controllers have the valves
0:08:19   inside of them. They operate as a truly ultrahigh purity valve because of that uh sorry, ultrahigh
0:08:27   purity pressure controller because they have that valve inside. So there's no moving parts inside of
0:08:33   those valves. So you're also reducing the opportunity for particle generation. Again there's zero
0:08:39   dead space in this and they are true shut off valve. They are refurbished able and reasonable. It's
0:08:46   like I said I'm talking about high reliability electronics and I was going to show you a nana
0:08:51   laminate. So here on the right is an ana laminate and you can see the discrete layers of two
0:08:57   different metal oxides. There is a white paper on our website and I'm happy to direct you to it if
0:09:04   you would like. Um So these are F. Devices have this this environmental protection barrier on it.
0:09:13   The next slide has data um using our L. D. Cap for environmental protection barriers on our F.
0:09:21   Devices. These devices have gone through hast or harsh environmental testing at 130° C and 85%
0:09:31   reliability. uh relative humidity. The reliability of these devices after they've gone through the
0:09:38   test with the L. D. Cap has about three Percent failure or less than 1% failure. Based on the bias
0:09:49   voltage that was applied across the device, We're happy to provide more details on this data.
0:09:56   There's additional data listed in that white paper that I just mentioned. So this this comparison at
0:10:03   a 99% failure rate is to a plasma enhanced CVD deposition of silicon nitride at 200 nanometers.
0:10:13   Again, I hope this is interesting information for you were happy to discuss it more and I hope you
0:10:18   enjoyed this presentation. Thank you so much for watching.