ALDx Fast and Efficient ALD at Forge Nano
Dane Lindblad – Forge Nano
A brief overview of the ALDx processes being developed at Forge Nano, specifically catered to coating wafers, objects, and other low surface area parts and substrates.
0:00:02 Hello. My name is Dane Linblad I'm one of the R and D. Scientists here at forage nano And today I 0:00:09 will be talking to you about the new LG processes we've been working on specifically designed for 0:00:17 coding wafers and parts and objects, which we refer to as L. D. Give you a little bit of background 0:00:26 about myself. I have been working in L. D for the last 10 years, predominantly over on the process 0:00:33 side of things. So actually running all the coatings and putting developing these new chemistries 0:00:40 and working with our engineering teams to design, develop equipment that makes makes a lot of these 0:00:48 coatings possible. 0:00:52 So as a quick overview, LV X refers to this fast deposition process that we that we're running 0:01:01 suited specifically for coding wafers, objects, parts and other lower surface area substrates. Now 0:01:09 these processes themselves running around 1/2 per cycle with really high precursor efficiency. So 0:01:17 this means that we can still get all those benefits of equality, ale decoding, but now we can run 0:01:24 them at film thicknesses that are typically reserved for other PVT process. And just want to note 0:01:33 that since these lbX processes are meant specifically for waivers and parts, it's um important to 0:01:41 say that they are distinctly different from the particle lb processes that forge nano has developed 0:01:48 for coding powders and other high services. Two. 0:01:55 So the key here behind these sub second cycle times lies in what we call the synchronously modulated 0:02:03 flow in draw L. D. Process for the S M F D. L. D. At its core, we still have the same basic 0:02:12 principles that govern all a all the processes. Yes. Sequential, self limiting surface reactions. 0:02:20 And you repeat these steps over and over again until you get to your desires. Something. The key 0:02:27 here though, is that inside of our reaction chamber were able to modulate or flow in such a way that 0:02:34 we can change their residence time of different gases as they pass over our substance. So to break 0:02:40 one of the EU's cycles down first, we have our pulse during the pulse precursor is being introduced 0:02:46 into the reaction space. And we're combining high precursor flow into the chamber with the low draw 0:02:53 out of the precursor container. And this gives you a higher partial pressure of precursor inside 0:03:01 your reaction space, which leads to shorter reaction times. And the well we're draw out of the 0:03:09 container leads to lower chemical consumption overall. And then next up we have the dose and the 0:03:19 dose acts as a sort of static hold where the flow out of their reaction space minimized and the 0:03:25 precursors are allowed to hang around and react with all the available services. And so as a result, 0:03:33 we're able to really maximize the precursor utilization and efficiency during each of the zeo half 0:03:39 reactions. And then finally we have the purge step where we use high flow and low pressure to really 0:03:49 sweep are inert gas through there at a really low residence time and get a really really fast purge 0:03:58 in between each of our have reactions. And so this chart over on the right here shows you in a 0:04:06 typical standard flow design reactor. The trade off you typically get between chemical utilization 0:04:16 and purge time as a function of your residents time. So here this curve is essentially showing us 0:04:21 that with really short residence times you have low chemical utilization but you can get away with 0:04:27 fast purge times whereas a longer residence time will give you better kIM usage. But your purge 0:04:34 times are real slow. And so this S M F. D. L. D process overcomes the trade off of having to choose 0:04:41 where you want to be along this curve by allowing us to modulate the flow through our reactors such 0:04:49 that during the dose we can have a real short we have a real long residence times evening in order 0:04:58 to allow the chemical to react with all of our available surfaces and a really short residence time 0:05:05 during our purred. So we can get those reactive gases out of there quickly in between steps. 0:05:14 So in addition to fast cycling times, the L. D. X. Systems and the SMS DLD process also allows to 0:05:23 run certain processes that we really otherwise wouldn't be able to run in a standard flow style 0:05:31 reactor. and one example of this is the we have dubbed catalyzing reactions for induced surface 0:05:39 process or the crisp process. And now this chris process essentially brings together multiple 0:05:47 precursors which when combined catalyzed the surface reaction to kind of give you a more reactive 0:05:53 species. And you would have had otherwise. For the example here I have is where we were using our 0:05:59 chris process to grow silicon dioxide L. D. And I have uh I have a Q. C. M. P. A lot over here which 0:06:09 illustrates your film growth with each L. D. Cycle. So each of these steps represents one full ale. 0:06:17 The cycle and the accumulated mass which is then translated over into an overall film thickness from 0:06:24 the QC. Um Crystal is is shown on the other asses. 0:06:32 And so what what we what we see here is our more traditional S. I. O. To process using di ethyl 0:06:39 amino silent or be Das and ozone isn't isn't giving us a whole lot of growth as this ale. The 0:06:50 process is repeated. However, when we come in with our chris process, we're Pretty reliably and 0:07:00 repeatedly getting just over about one ancient recycle with with the JlG Sehgal. And so that's just 0:07:10 11 example of the chris process offering more more reactive half reaction to the silicon reaction to 0:07:18 complete this S. I. O. To process. And you know, in in addition to giving us more reactive species, 0:07:27 that's the idea behind this chris process can also be used to really broadened the temperature 0:07:34 window at which some some of our other more traditional LD processes are run. 0:07:47 So the key here is basically the fast cycling and high throughput L. D. Is going to allow us to grow 0:07:54 solid informal films over intricate geometries on thickness is on the order of hundreds of 0:08:03 nanometers without without too many that too extensive of processing times. 0:08:11 And so here I have a picture of an S. I. O. To film that was grown on top of the steps structure. 0:08:19 And because we're growing L. D. Here, you can see that the film thickness is pretty much constant 0:08:28 all the way across this structure. Despite the despite the aspect ratio. And the plot over here on 0:08:37 the right is showing some of the reproducibility data that we've collected for for running films 0:08:48 through through this equipment. Um in this plot we essentially ran a bunch of waivers back to back 0:08:54 to back um each of them getting a 100 angstrom aluminum oxide coating. And this line here is showing 0:09:04 the overall thickness on each of these waivers and how it's really not varying much from 11 run to 0:09:11 the next. And then the points down here are showing the range within each with any to wait for that 0:09:18 was measured. Yeah, 0:09:25 so here's another example of one of the, one of the films we commonly put down. This is uh 200 0:09:34 nanometer barrier film that was likely used for environmental protection. And the image over here is 0:09:42 showing a cross section and highlighting void inside this part that we had coded and you know in in 0:09:52 this image you can see that this year is our lb coding and it's con formal all the way through the 0:09:59 edge inside of this voice. And if we look at the close up we can see all the distinct L. D. Layers 0:10:08 that we put down during this process. So right up here on the surface we have adhesion layer and 0:10:16 then on top of that we grew a nano imminent, which is essentially the alternating thicknesses of two 0:10:24 different LD chemistries. And that's what each of these striations is showing is when we flip from 0:10:30 one process to the next and back and forth and back and forth. And then here on the very top we have 0:10:38 this extra anti corrosion layer. And the one thing this image shows real nicely is how each one of 0:10:45 these layers follows the contours of the surface very nicely. In in the fashion that you would 0:10:54 expect from from a L. D. 0:10:59 Mhm. So now I wanna talk a little bit about the equipment that we're using to deposit some of these 0:11:06 films. And first up we have Apollo and now this is the tool you would use for your wafer to wafer 0:11:14 production has a wafer handling robot which allows you to do pathetic set operation. There's a load 0:11:21 lock so that the L. D. Chamber is never exposed to atmosphere. You know, this cuts down on 0:11:28 maintenance inside the reactor helps to keep your reactor space particle free. The chamber has an 0:11:36 integrated abatement system that will react away any of your unused precursor, which prevents you 0:11:43 from slowing it down into the pump and the end of a. This is this is the tool that you want to stone 0:11:50 a fab so that you can throw down ellie coatings on one waver after the next, after the next and uh 0:11:58 in a sort of production setting. 0:12:03 So next up we have to Now this is a smaller tool whose focus is really on research and development 0:12:11 and bringing up new LD processes or testing out your new film on different parts of ST. It has the 0:12:21 same fast led process as the other tool, but this one is specifically built with customization and 0:12:30 configurability in mind. The led manifold itself is housed inside of a convicted reheated box, 0:12:38 meaning that you get really good temperature uniformity for every pain up inside there. So for 0:12:45 example, if you're working with a really low favorite pressure preachers or that needs to be heated 0:12:50 to relatively high temperatures, you can pop it inside this, convicted we heated box and get it up 0:12:57 to temperature there without any worry of cold spots or compensation on your way down to the 0:13:03 manifold and into the reactor. And with this tool, the reaction chamber itself can actually be 0:13:10 configured for coding wafers or parts or components, you know, depending depending on what you need. 0:13:16 Uh The tooling itself is field serviceable and really can be configured in all sorts of different 0:13:24 ways. 0:13:27 And then finally Here we have he meows. This tool has a real big 22" by 6" reactor which you can use 0:13:36 to fit large parts or fixtures that are holding a variety of different parts. And you know, this 0:13:43 tools, main focus is really on industrial coding application, essentially putting down a lot of film 0:13:49 on a lot of parts in a short amount of time. And it's got it's got similar onboard chemical 0:13:58 abatement so that you're not sending to, you're not sending reactive precursors straight to your 0:14:04 home. And this tool actually has maintenance intervals of around 500 microns of accumulated groups. 0:14:16 So you can get you can get a lot of coatings down in there without without having to tear it apart, 0:14:22 perform service inside. 0:14:27 Mhm. And so in general that's uh that's a quick overview on the L. D. X. Processes that we've been 0:14:37 working on here At 14 I know and if you are interested in reading about any of the applications that 0:14:48 we've applied these films to or if you want to see how how effective they are in in different spaces 0:14:54 and head on over to our website. And we've got a bunch of short and sweet little white papers and 0:15:01 application notes that that will tell you all about these films and processes use. And with that, 0:15:10 I'd like to thank you for your time and I hope you all enjoy the rest of the A. C. Summit.