0:00:01   Hi, welcome to my presentation on ALD Process development on the Advanced Too Fast Engineering
0:00:08   Summit organized by Forge Nano. My name is Noureddin Adjerod. I'm coming to you from the
0:00:15   Luxembourg Institute of Science and Technology where I'm the engineer in charge of the old process
0:00:21   Development center. Atomic layer deposition is for now, principally used in the semiconductor
0:00:29   industry in list. We believe that the L. Can have many other applications. The work that I'm
0:00:37   presenting was done by the team and the member of this team are mentioned on this first slide. Yeah,
0:00:49   I would like to thank fortunately for putting this summit together. This is a great opportunity to
0:00:56   share our latest work to start out today. I'm going to split the agenda between a short description
0:01:02   of least Development Center for a while and then I will give you example of the work we have done
0:01:09   recently enlist.
0:01:13   So we're going to tell you more about specifics on how we do L. D. And talking about our to set and
0:01:21   what kind of results we have. I want to take the time to explain why we got into the field of Eld. I
0:01:28   will introduce the experience at different levels first, at the Luxembourg level, then at least
0:01:36   level and then at my personal level. So Luxembourg is a small country in center of europe. We are
0:01:45   located between Germany France and Belgium. And as a small country not really blessed with not to
0:01:52   have the resources, it was necessary to invest in a few specific area of expertise. Okay, Luxembourg
0:02:01   took a decision to develop research institutions with the aim of working closely with their
0:02:07   industrial partner. One of this institution is the Luxembourg Institute of Science and Technology
0:02:13   the list and we focus on high potential and future oriented sector such as nanotechnology. So at the
0:02:25   least level, the institute was already equipped with DVD and safety tools but L appeared to be an
0:02:33   absolute necessity for future research projects. We had the idea that this technology should be used
0:02:40   outside the semiconductor world as well to bring benefit to the whole industry of community And then
0:02:49   at my personal level. So I was I have been a process engineer in the semiconductor industry for
0:02:55   about 10 years and I saw raising uh a L. D. As a disruptive deposition technology that will
0:03:05   successfully replace CVD and PVT technology that a recording can be tina and extremely uniform. The
0:03:14   growth at the grew at lower temperature, they grow pinhole free and also with an incredible con
0:03:22   formality and you have also an absolute thickness control. There is no other deposition technique
0:03:30   that can be precise, precise to the atom level. In addition to these ellie tools, very stable,
0:03:40   repeatable and reliable and that for an engineer like me this is extremely value added. So at the
0:03:50   time I was in a semiconductor field. The only processes available where half the um oxide and
0:03:55   titanium nitride, but potential to grow or the material was phenomenon. But before I get into our
0:04:05   latest results, I will talk a little bit about us. So list is an applied research center. So this
0:04:13   means that we focus on real world applications. In simple term list can be viewed as a big
0:04:20   innovation factory with the objective to accelerate and diversified the economy through it
0:04:27   technology transfer to company. So in least we have a wild portfolio of activity in innovative
0:04:35   materials. And the L Development Center is dedicated to the research and the application of the L. D.
0:04:41   Too many different field and industry.
0:04:47   Our team film deposition capability is made of complementary tools. We have a unique tool set. I
0:04:54   believe our tools are coming from leading suppliers such as Bennack and Picasso, but we also have
0:05:03   our own made prototypes.
0:05:10   So you can see on this picture, the tools that we have. So thanks to our two sets, we can code
0:05:18   basically anything from flat materials Complex three d objects, textiles, membrane and even powder
0:05:27   by using free decide bed reactor FBR. So we can go from a few atomic layer to save our microns in
0:05:35   thickness
0:05:40   least brings together a critical mass of researchers from different fields to develop competitive
0:05:47   solutions from a thin film characterization point of view. The current capability includes focused
0:05:54   ion beam Sofield technology, scanning beam system, atomic force, microscopy, papilloma tree and
0:06:03   optometry. And then we all, we are also equipped with X. R. D. X expression, few other
0:06:10   characterizations technique. So now I will go through the work we have done recently,
0:06:23   no temperature growth of ps electric aluminum nitrate films by plasma and hence atomic layer
0:06:30   deposition and magnitude electric coupling with Nicole for energy harvesting application. This study
0:06:39   was publishing a pl material in 2020 with an application case for but need to electric transducers.
0:06:50   In this work, we proposed an innovative process for highly can formal growth of aluminum light right,
0:06:58   opening up a new path to design ps electric material for micro electro mechanic system maps.
0:07:09   Okay, aluminium nitride can have an exact channel versus structures. It holds several excellent
0:07:17   properties such as chase electric effect with a wide band gap. Thanks to that, it demonstrates a
0:07:25   wide range of applications such as energy. Huh? Versus however, does application require 002 crystal
0:07:39   oriented film for place of electric effect.
0:07:47   So dealing with several thermodynamic parameters such as to growth temperature and the purging time.
0:07:55   During the L. D. Process. High quality aluminium nitrogen films with 002 orientation has been
0:08:04   obtained for the first time by PE LD. So to the best of our knowledge of course And at a moderate
0:08:12   temperature of uh 250°.. So this slide is probably one of the most important of this presentation.
0:08:24   So what you can see there are the four typical steps of an L. G. Process. So the first step is the
0:08:34   uh person of the first practices of the T. M. A. In this case. So you have to make sure that the
0:08:39   person is a short enough. So you don't uh overload your reaction symbol and your for line followed
0:08:48   by a perch time. So it was identified at this part time is quite critical for the PS electric
0:08:54   property of the film. Then you have to step with uh plus my on and plus my off. Then the perch after
0:09:02   the plasma. And then you can cycle like this your L. D. Process. So we have done a few type of
0:09:10   experiment that you can see from a one to a five with different parameters. And then we will go
0:09:16   we'll discuss the results in a comic slides.
0:09:22   Okay so the crystalline itty micro structure of the aluminum nitrate till films was characterized by
0:09:29   XRT. As you can see for the film grow grown at 180 degrees orientation. 100 is highly preferred but
0:09:42   by tuning the temperature and the purging time The 002 crystalline phase appeared. The texture
0:09:53   coefficient for 002 was also calculated This uh coefficient, highlight the ratio of relative and
0:10:03   density of 002 orientation over the sum of relative intensity of all the diffraction speaks. In this
0:10:13   case, we calculated for three plants to the maximum of texture coefficient is three.
0:10:25   So on. The first graph, the place of electric coefficient is the highest for the simple a five in
0:10:32   green. So this is the sample with the 00 to Orientation. On the next figure, the four point bending
0:10:42   measurement of generated charge under the strength of aluminum nitride field on the silicon
0:10:48   substrate coated with nickel layer as a bottom electrode. So what we can see is that the charge are
0:10:56   higher For the simple a five Meaning with a longer perched time after the tmm pearls and a step at
0:11:05   250°..
0:11:09   So, as the conclusion of this paper, The uh aluminum nitride film with PS two electric property
0:11:17   could be obtained by playing with the Keeper Amateur, which are the purging time after, after the tM
0:11:25   acres and uh the deposition temperature.
0:11:33   So our team presented an innovative approach, also using oxygen during the outgrowth of metal oxide
0:11:41   film, for example, zinc oxide. So that was uh that that what we saw was that the oxygen helps to
0:11:50   overcome the challenge of growing 002 oriented fears needed to achieve appears electric response in
0:11:58   zinc oxide in films. So this paper was published in hazards in nano materials and the name of
0:12:05   controlling electrical and optical properties of zinc oxide, thin films grown by turmoil, atomic
0:12:11   layer deposition with oxygen gas. So, don't get me wrong, we are also using water because normally
0:12:18   TMM doesn't react with oxygen.
0:12:24   So on the figure A. So the figure eight illustrated growth ratio, the growth rate of gallium nitride
0:12:33   For different person time of oxygen at a constant substrate temperature of 180°.. The growth rate
0:12:42   decreased significantly and stabilised with a person time above one second on the figure B. On the
0:12:52   right hand side, the X ray diffraction pattern of zinc oxide. Uh He's shown there
0:13:04   no.
0:13:09   So it can be seen in the figure A. So on the top left that the zinc oxide in film grown without
0:13:18   using oxygen gas clearly shows the distribution of different grain orientations with crystal light's
0:13:27   parallels to parallel to the substrate. This is also consistent with the X ray diffraction data That
0:13:35   shows a mixture of 100 002 and 100 Orientations on the opposite figures. B. C and D. Presented the
0:13:48   film processed with oxygen. So this is a top view and then a significant change in the morphology of
0:13:57   the Sunnis observed. They are composed of grains Which are mostly vertically oriented along the 002
0:14:05   direction.
0:14:10   The electrical resistive Itty of those films grown in the oxygen condition Show a dramatic increase
0:14:19   of 3-4 order of magnitude compared to the film grown without oxygen cars. So this is what you can
0:14:29   see on this uh on this graph.
0:14:35   The work that we do in list is published. So what we have done uh in a art can be found on
0:14:46   publications. So you have here a few examples and a few more examples of the work that has been
0:14:54   recently published. Yeah, so it's already time to conclude this presentation. So we believe that the
0:15:02   L. D. Film needs to be adapted to the application but also adapted to the market. And to our partner.
0:15:11   We believe that having a multi disciplinary team make a difference. It happened that in least we are
0:15:18   making great film by L. D. one Atom at the time. If you have any questions, I will be more than
0:15:28   happy to follow up on them by email or via linked in. And I thank you again for your interest.
0:15:59   Mhm. Well, let me thank you for your attention.
0:17:37   Yeah.
0:17:40   Oh,
0:17:54   about that.