Advanced ALD Technologies Platform to Enable Future Applications
Noureddine Adjeroud – Luxembourg Institute of Science and Technology
Noureddine Adjeroud will discuss why the Luxembourg Institute of Science and Technology (LIST) got into get into the field of ALD. And this before to tell more about the specifics on how LIST is doing ALD and what are the latest results published.
Luxembourg aims of working closely with the needs of industrial partners. LIST focuses on high-value-added sectors such as Nanotechnology. ALD appeared at an absolute necessity for future researcher projects. In LIST we believe that ALD had to be brought outside the semiconductor world to bring benefit to the whole industrial community.
The agenda will be split between a short description of LIST development centre for ALD; and then few examples of the work done recently will be presented: Low temperature growth of piezoelectric AlN, zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas…
0:00:01 Hi, welcome to my presentation on ALD Process development on the Advanced Too Fast Engineering 0:00:08 Summit organized by Forge Nano. My name is Noureddin Adjerod. I'm coming to you from the 0:00:15 Luxembourg Institute of Science and Technology where I'm the engineer in charge of the old process 0:00:21 Development center. Atomic layer deposition is for now, principally used in the semiconductor 0:00:29 industry in list. We believe that the L. Can have many other applications. The work that I'm 0:00:37 presenting was done by the team and the member of this team are mentioned on this first slide. Yeah, 0:00:49 I would like to thank fortunately for putting this summit together. This is a great opportunity to 0:00:56 share our latest work to start out today. I'm going to split the agenda between a short description 0:01:02 of least Development Center for a while and then I will give you example of the work we have done 0:01:09 recently enlist. 0:01:13 So we're going to tell you more about specifics on how we do L. D. And talking about our to set and 0:01:21 what kind of results we have. I want to take the time to explain why we got into the field of Eld. I 0:01:28 will introduce the experience at different levels first, at the Luxembourg level, then at least 0:01:36 level and then at my personal level. So Luxembourg is a small country in center of europe. We are 0:01:45 located between Germany France and Belgium. And as a small country not really blessed with not to 0:01:52 have the resources, it was necessary to invest in a few specific area of expertise. Okay, Luxembourg 0:02:01 took a decision to develop research institutions with the aim of working closely with their 0:02:07 industrial partner. One of this institution is the Luxembourg Institute of Science and Technology 0:02:13 the list and we focus on high potential and future oriented sector such as nanotechnology. So at the 0:02:25 least level, the institute was already equipped with DVD and safety tools but L appeared to be an 0:02:33 absolute necessity for future research projects. We had the idea that this technology should be used 0:02:40 outside the semiconductor world as well to bring benefit to the whole industry of community And then 0:02:49 at my personal level. So I was I have been a process engineer in the semiconductor industry for 0:02:55 about 10 years and I saw raising uh a L. D. As a disruptive deposition technology that will 0:03:05 successfully replace CVD and PVT technology that a recording can be tina and extremely uniform. The 0:03:14 growth at the grew at lower temperature, they grow pinhole free and also with an incredible con 0:03:22 formality and you have also an absolute thickness control. There is no other deposition technique 0:03:30 that can be precise, precise to the atom level. In addition to these ellie tools, very stable, 0:03:40 repeatable and reliable and that for an engineer like me this is extremely value added. So at the 0:03:50 time I was in a semiconductor field. The only processes available where half the um oxide and 0:03:55 titanium nitride, but potential to grow or the material was phenomenon. But before I get into our 0:04:05 latest results, I will talk a little bit about us. So list is an applied research center. So this 0:04:13 means that we focus on real world applications. In simple term list can be viewed as a big 0:04:20 innovation factory with the objective to accelerate and diversified the economy through it 0:04:27 technology transfer to company. So in least we have a wild portfolio of activity in innovative 0:04:35 materials. And the L Development Center is dedicated to the research and the application of the L. D. 0:04:41 Too many different field and industry. 0:04:47 Our team film deposition capability is made of complementary tools. We have a unique tool set. I 0:04:54 believe our tools are coming from leading suppliers such as Bennack and Picasso, but we also have 0:05:03 our own made prototypes. 0:05:10 So you can see on this picture, the tools that we have. So thanks to our two sets, we can code 0:05:18 basically anything from flat materials Complex three d objects, textiles, membrane and even powder 0:05:27 by using free decide bed reactor FBR. So we can go from a few atomic layer to save our microns in 0:05:35 thickness 0:05:40 least brings together a critical mass of researchers from different fields to develop competitive 0:05:47 solutions from a thin film characterization point of view. The current capability includes focused 0:05:54 ion beam Sofield technology, scanning beam system, atomic force, microscopy, papilloma tree and 0:06:03 optometry. And then we all, we are also equipped with X. R. D. X expression, few other 0:06:10 characterizations technique. So now I will go through the work we have done recently, 0:06:23 no temperature growth of ps electric aluminum nitrate films by plasma and hence atomic layer 0:06:30 deposition and magnitude electric coupling with Nicole for energy harvesting application. This study 0:06:39 was publishing a pl material in 2020 with an application case for but need to electric transducers. 0:06:50 In this work, we proposed an innovative process for highly can formal growth of aluminum light right, 0:06:58 opening up a new path to design ps electric material for micro electro mechanic system maps. 0:07:09 Okay, aluminium nitride can have an exact channel versus structures. It holds several excellent 0:07:17 properties such as chase electric effect with a wide band gap. Thanks to that, it demonstrates a 0:07:25 wide range of applications such as energy. Huh? Versus however, does application require 002 crystal 0:07:39 oriented film for place of electric effect. 0:07:47 So dealing with several thermodynamic parameters such as to growth temperature and the purging time. 0:07:55 During the L. D. Process. High quality aluminium nitrogen films with 002 orientation has been 0:08:04 obtained for the first time by PE LD. So to the best of our knowledge of course And at a moderate 0:08:12 temperature of uh 250°.. So this slide is probably one of the most important of this presentation. 0:08:24 So what you can see there are the four typical steps of an L. G. Process. So the first step is the 0:08:34 uh person of the first practices of the T. M. A. In this case. So you have to make sure that the 0:08:39 person is a short enough. So you don't uh overload your reaction symbol and your for line followed 0:08:48 by a perch time. So it was identified at this part time is quite critical for the PS electric 0:08:54 property of the film. Then you have to step with uh plus my on and plus my off. Then the perch after 0:09:02 the plasma. And then you can cycle like this your L. D. Process. So we have done a few type of 0:09:10 experiment that you can see from a one to a five with different parameters. And then we will go 0:09:16 we'll discuss the results in a comic slides. 0:09:22 Okay so the crystalline itty micro structure of the aluminum nitrate till films was characterized by 0:09:29 XRT. As you can see for the film grow grown at 180 degrees orientation. 100 is highly preferred but 0:09:42 by tuning the temperature and the purging time The 002 crystalline phase appeared. The texture 0:09:53 coefficient for 002 was also calculated This uh coefficient, highlight the ratio of relative and 0:10:03 density of 002 orientation over the sum of relative intensity of all the diffraction speaks. In this 0:10:13 case, we calculated for three plants to the maximum of texture coefficient is three. 0:10:25 So on. The first graph, the place of electric coefficient is the highest for the simple a five in 0:10:32 green. So this is the sample with the 00 to Orientation. On the next figure, the four point bending 0:10:42 measurement of generated charge under the strength of aluminum nitride field on the silicon 0:10:48 substrate coated with nickel layer as a bottom electrode. So what we can see is that the charge are 0:10:56 higher For the simple a five Meaning with a longer perched time after the tmm pearls and a step at 0:11:05 250°.. 0:11:09 So, as the conclusion of this paper, The uh aluminum nitride film with PS two electric property 0:11:17 could be obtained by playing with the Keeper Amateur, which are the purging time after, after the tM 0:11:25 acres and uh the deposition temperature. 0:11:33 So our team presented an innovative approach, also using oxygen during the outgrowth of metal oxide 0:11:41 film, for example, zinc oxide. So that was uh that that what we saw was that the oxygen helps to 0:11:50 overcome the challenge of growing 002 oriented fears needed to achieve appears electric response in 0:11:58 zinc oxide in films. So this paper was published in hazards in nano materials and the name of 0:12:05 controlling electrical and optical properties of zinc oxide, thin films grown by turmoil, atomic 0:12:11 layer deposition with oxygen gas. So, don't get me wrong, we are also using water because normally 0:12:18 TMM doesn't react with oxygen. 0:12:24 So on the figure A. So the figure eight illustrated growth ratio, the growth rate of gallium nitride 0:12:33 For different person time of oxygen at a constant substrate temperature of 180°.. The growth rate 0:12:42 decreased significantly and stabilised with a person time above one second on the figure B. On the 0:12:52 right hand side, the X ray diffraction pattern of zinc oxide. Uh He's shown there 0:13:04 no. 0:13:09 So it can be seen in the figure A. So on the top left that the zinc oxide in film grown without 0:13:18 using oxygen gas clearly shows the distribution of different grain orientations with crystal light's 0:13:27 parallels to parallel to the substrate. This is also consistent with the X ray diffraction data That 0:13:35 shows a mixture of 100 002 and 100 Orientations on the opposite figures. B. C and D. Presented the 0:13:48 film processed with oxygen. So this is a top view and then a significant change in the morphology of 0:13:57 the Sunnis observed. They are composed of grains Which are mostly vertically oriented along the 002 0:14:05 direction. 0:14:10 The electrical resistive Itty of those films grown in the oxygen condition Show a dramatic increase 0:14:19 of 3-4 order of magnitude compared to the film grown without oxygen cars. So this is what you can 0:14:29 see on this uh on this graph. 0:14:35 The work that we do in list is published. So what we have done uh in a art can be found on 0:14:46 publications. So you have here a few examples and a few more examples of the work that has been 0:14:54 recently published. Yeah, so it's already time to conclude this presentation. So we believe that the 0:15:02 L. D. Film needs to be adapted to the application but also adapted to the market. And to our partner. 0:15:11 We believe that having a multi disciplinary team make a difference. It happened that in least we are 0:15:18 making great film by L. D. one Atom at the time. If you have any questions, I will be more than 0:15:28 happy to follow up on them by email or via linked in. And I thank you again for your interest. 0:15:59 Mhm. Well, let me thank you for your attention. 0:17:37 Yeah. 0:17:40 Oh, 0:17:54 about that.