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Semiconductor Overview
Learn how ALD technology is being used in semiconductors, and the the unique benefits that Forge Nano is enabling, through our high speed, low waste systems.
TEPHRA Cluster System
TEPHRA features Forge Nano’s proprietary ALDx technology combining batch-level throughput and efficiency with quality and performance in a single-wafer, thermal ALD cluster tool. Learn More
SEMICONDUCTORS
Differentiated technology allowing for faster and more efficient ALD while meeting today’s leading quality standards for emerging 200mm More-than-Moore markets
ALDx Enables Ultrathin, Uniform, Pinhole-Free Films at Unprecedented Speed and Efficiencies
Today’s semiconductor industry is not the same as when Atomic Layer Deposition (ALD) was first adopted. In the More-than-Moore era of today, film quality and performance are just as important as the ability to scale. As traditional and novel device architectures combine to create innovative electronics, incumbent fabrication technologies will reach their limit of quality and precision.
Things have changed, and now ALD has, too. Ultrathin, uniform and pinhole-free films by ALD are now possible at unprecedented speeds and efficiencies with Forge Nano’s ALDx equipment and solutions, bringing newfound reliability and performance to More-than-Moore device markets.
ALDx: The Solution for Reduced Wafer Cost & Limitless Film Opportunities
For semiconductor R&D and manufacturing, ALDx provides the following benefits:
- High wafer throughputs
- 12 nm/min growth rates make ALDx speeds competitive with CVD offering a superior film at viable manufacturing throughputs
- Decreased OPEX and reduced waste
- Up to 90% precursor efficiency limits process waste, decreases OPEX consumable costs and reduces the number of preventative maintenance cycles
- Low-risk manufacturing
- Single-wafer processing caps yield loss risk at one wafer and decreases the time at temperature seen by thermally sensitive devices
- No need for plasma processing (and costs!)
- Easier process integration using our catalyzed thermal process that easily enables hard-to-deposit materials at low temperature
CASE STUDIES & APPLICATION NOTES
HARSH ENVIRONMENTS
Learn here how Forge Nano’s ALD-CAP® prevents the failure of optical field-effect transistors in high-stress environments.
SEMICONDUCTORS
Low temperature ALD growth optimization of ZnO, TiO2, and Al2O3 to be used as a buffer layer in perovskite solar cells.
Who do we help?
Forge Nano provides ALD equipment and thin film solutions for fabs and foundries across the entire More-than-Moore market space. We are eager to work with companies working in the following verticals:
- Power Devices
- RF Devices
- MEMS
- CMOS Image Sensors
- LED & Photonics
- Advanced Packaging
Utilizing proprietary reactor design, valving and process technology, Forge Nano’s ALDx platform smashes the long-standing barriers to ALD adoption of speed and cost to offer the highest quality thin films for semiconductor device fabrication at world-leading ALD throughputs. Specialty semiconductor fabs focused on More-than-Moore device markets can enjoy the quality and precision offered by ALD at speeds and efficiencies comparable to traditional CVD and PVD methods.
Our ALDx solutions include:
- Metal Contacts
ALD Equipment for Semiconductor Fabrication
Forge Nano offers two ALD coating machines for use in the semiconductor industry: THEIA and APOLLO.
THEIA
THEIA
Contact Us To Learn More
TEPHRA™
200 mm Cluster Platform
Performance, Yield, and Speed. We don’t do tradeoffs.
TEPHRA is Forge Nano’s single-wafer, thermal ALD cluster tool dedicated to high volume manufacturing of specialty semiconductor applications on 200 mm wafers and below. It is built for high throughputs, efficient chemical use and low-risk manufacturing, setting new benchmarks for thermal ALD productivity.
Atomic layer deposition Designed for manufacturing
TEPHRA features Forge Nano’s proprietary ALDx technology combining batch-level throughput and efficiency with quality and performance in a single-wafer, thermal ALD cluster tool. With dedicated process modules for conformal oxide, nitride and metal depositions, TEPHRA enables advanced device architectures for applications in heterogeneous integration, power semiconductor, radio frequency devices, microLED and more.
CASE STUDIES & APPLICATION NOTES
HARSH ENVIRONMENTS
Learn here how Forge Nano’s ALD-CAP® prevents the failure of optical field-effect transistors in high-stress environments.
SEMICONDUCTORS
Low temperature ALD growth optimization of ZnO, TiO2, and Al2O3 to be used as a buffer layer in perovskite solar cells.
cluster SPECIFICATIONS
TEPHRA is available in 3 configurations: a 4-sided, 6-side and 8-sided cluster platform.
Specification | 3 Process Modules | 4 Process Modules | 6 Process Modules |
Wafer Sizes | Up to 200 mm | ||
Process Temperatures | 80°C to 300°C | ||
Precursor Channels | Up to 6 | ||
Power Requirements | 3-Phase,4-Wire 208Y/120 V @ 60Hz | ||
Certifications | SEMI S-2, SEMI S-8, CE | ||
Main dimensions (LxWxH) | 2660x3745x1960 mm | 2685x3840x1960 mm | 4070x3130x1960 mm |
Ancillary Equipment | Main Power Distribution 300x900x1800 mm |
MATERIALS
Oxides: Al2O3, SiO2, HfO2, ZrO2, Ta2O5, AZO, TiO2, Y2O3
Nitrides: TiN, TaN, AlN, GaN, ZrN,
Elements: Ru, Pt, Co, Cu, Ni
APPLICATIONS
Barrier Films
Seed Layers
Moisture Barriers
Dielectrics
Passivation Layers
Transparent Conductive Oxides