Jump to:

Semiconductor Overview

Semiconductor wafer after processing in an ALD tool

Learn how ALD technology is being used in semiconductors, and the the unique benefits that Forge Nano is enabling, through our high speed, low waste systems.  

TEPHRA Cluster System

Atomic Layer Deposition cluster tool for 200 mm wafer processing

TEPHRA features Forge Nano’s proprietary ALDx technology combining batch-level throughput and efficiency with quality and performance in a single-wafer, thermal ALD cluster tool. Learn More 

SEMICONDUCTORS

Differentiated technology allowing for faster and more efficient ALD while meeting today’s leading quality standards for emerging 200mm More-than-Moore markets

ALDx Enables Ultrathin, Uniform, Pinhole-Free Films at Unprecedented Speed and Efficiencies

Today’s semiconductor industry is not the same as when Atomic Layer Deposition (ALD) was first adopted. In the More-than-Moore era of today, film quality and performance are just as important as the ability to scale. As traditional and novel device architectures combine to create innovative electronics, incumbent fabrication technologies will reach their limit of quality and precision.

Things have changed, and now ALD has, too. Ultrathin, uniform and pinhole-free films by ALD are now possible at unprecedented speeds and efficiencies with Forge Nano’s ALDx equipment and solutions, bringing newfound reliability and performance to More-than-Moore device markets.

ALDx: The Solution for Reduced Wafer Cost & Limitless Film Opportunities

ALDx represents a new way of performing ALD designed to overcome the adoption barriers of traditional ALD. Rather than scaling up batch size at the cost of chemical utilization, ALDx offers the perfect ALD process for a single wafer. Made possible by proprietary valving, reactor design and chemistry, ALDx ushers in a step function improvement for high-quality ALD films to be applied faster and at lower cost than competing coating technologies such as PVD and CVD, PE-CVD, and even traditional ALD!

For semiconductor R&D and manufacturing, ALDx provides the following benefits:

  • High wafer throughputs
    • 12 nm/min growth rates make ALDspeeds competitive with CVD offering a superior film at viable manufacturing throughputs
  • Decreased OPEX and reduced waste
    • Up to 90% precursor efficiency limits process waste, decreases OPEX consumable costs and reduces the number of preventative maintenance cycles
  • Low-risk manufacturing
    • Single-wafer processing caps yield loss risk at one wafer and decreases the time at temperature seen by thermally sensitive devices
  • No need for plasma processing (and costs!)
    • Easier process integration using our catalyzed thermal process that easily enables hard-to-deposit materials at low temperature

CASE STUDIES & APPLICATION NOTES

RF & POWER ELECTRONICS

MICRODISPLAYS

HARSH ENVIRONMENTS

 Learn here how Forge Nano’s ALD-CAP® prevents the failure of optical field-effect transistors in high-stress environments.

SEMICONDUCTORS

Low temperature ALD growth optimization of ZnO, TiO2, and Al2O3 to be used as a buffer layer in perovskite solar cells.             

Who do we help?

Forge Nano provides ALD equipment and thin film solutions for fabs and foundries across the entire More-than-Moore market space. We are eager to work with companies working in the following verticals:

  • Power Devices
  • RF Devices
  • MEMS
  • CMOS Image Sensors
  • LED & Photonics
  • Advanced Packaging

Utilizing proprietary reactor design, valving and process technology, Forge Nano’s ALDx platform smashes the long-standing barriers to ALD adoption of speed and cost to offer the highest quality thin films for semiconductor device fabrication at world-leading ALD throughputs. Specialty semiconductor fabs focused on More-than-Moore device markets can enjoy the quality and precision offered by ALD at speeds and efficiencies comparable to traditional CVD and PVD methods.

Our ALDx solutions include:

Contact Us To Learn More

TEPHRA™

200 mm Cluster Platform

Performance, Yield, and Speed. We don’t do tradeoffs.

TEPHRA is Forge Nano’s single-wafer, thermal ALD cluster tool dedicated to high volume manufacturing of specialty semiconductor applications on 200 mm wafers and below. It is built for high throughputs, efficient chemical use and low-risk manufacturing, setting new benchmarks for thermal ALD productivity.

Atomic Layer Deposition cluster tool for 200 mm wafer processing

Atomic layer deposition Designed for manufacturing

TEPHRA features Forge Nano’s proprietary ALDx technology combining batch-level throughput and efficiency with quality and performance in a single-wafer, thermal ALD cluster tool. With dedicated process modules for conformal oxide, nitride and metal depositions, TEPHRA enables advanced device architectures for applications in heterogeneous integration, power semiconductor, radio frequency devices, microLED and more.

CASE STUDIES & APPLICATION NOTES

RF & POWER ELECTRONICS

MICRODISPLAYS

HARSH ENVIRONMENTS

 Learn here how Forge Nano’s ALD-CAP® prevents the failure of optical field-effect transistors in high-stress environments.

SEMICONDUCTORS

Low temperature ALD growth optimization of ZnO, TiO2, and Al2O3 to be used as a buffer layer in perovskite solar cells.             

cluster SPECIFICATIONS

TEPHRA is available in 3 configurations: a 4-sided, 6-side and 8-sided cluster platform.

Specification​3 Process Modules​4 Process Modules​6 Process Modules​
Wafer Sizes

Up to 200 mm

Process Temperatures

80°C to 300°C

Precursor Channels

Up to 6

Power Requirements

3-Phase,4-Wire 208Y/120 V @ 60Hz
3-Phase,4-Wire 400Y/230 V @ 50Hz

Certifications

SEMI S-2, SEMI S-8, CE

Main dimensions(LxWxH)

2660x3745x1960 mm

2685x3840x1960 mm

4070x3130x1960 mm

Ancillary Equipment 

Main Power Distribution 300x900x1800 mm
Transport Module Dry Pump 450x230x275 mm
Process Module Dry Pumps 750x280x430 mm

MATERIALS

Oxides: Al2O3, SiO2, HfO2, ZrO2, Ta2O5, AZO, TiO2, Y2O3

Nitrides: TiN, TaN, AlN, GaN, ZrN,

Elements: Ru, Pt, Co, Cu, Ni

APPLICATIONS

Barrier Films

Seed Layers

Moisture Barriers

Dielectrics

Passivation Layers

Transparent Conductive Oxides

Want to learn more about TEPHRA and ALDx? Use the form below to contact our team of ALD experts.